The charge carrier mobility in thin films can be estimated from the output and transfer electrical characteristics of organic field-effect transistors using the molecular layer as electrical channel. Our facilities allow us to perfom these measurements with various device architectures (adapted to the nature - electrons or holes - of the charge carriers), under nitrogen atmosphere and within a narrow temperature range accessible with Peltier heat/cooling station. The corresponding mobility data corresponds to the "in-plane" charge transport, i.e. along the interface with the gate-dielectric.
The out-of-plane charge carrier mobility can be measured using space-charge limited current (SCLC) devices, i.e. metal-semiconductor-metal devices, with both metal/semiconductor interfaces being chosen to allow injection of a single type of charge carriers with negligible contact resistance.
Contact: Sadiara FALL